Atomic resolution mapping of phonon excitations in STEM-EELS experiments.

نویسندگان

  • R Egoavil
  • N Gauquelin
  • G T Martinez
  • S Van Aert
  • G Van Tendeloo
  • J Verbeeck
چکیده

Atomically resolved electron energy-loss spectroscopy experiments are commonplace in modern aberration-corrected transmission electron microscopes. Energy resolution has also been increasing steadily with the continuous improvement of electron monochromators. Electronic excitations however are known to be delocalized due to the long range interaction of the charged accelerated electrons with the electrons in a sample. This has made several scientists question the value of combined high spatial and energy resolution for mapping interband transitions and possibly phonon excitation in crystals. In this paper we demonstrate experimentally that atomic resolution information is indeed available at very low energy losses around 100meV expressed as a modulation of the broadening of the zero loss peak. Careful data analysis allows us to get a glimpse of what are likely phonon excitations with both an energy loss and gain part. These experiments confirm recent theoretical predictions on the strong localization of phonon excitations as opposed to electronic excitations and show that a combination of atomic resolution and recent developments in increased energy resolution will offer great benefit for mapping phonon modes in real space.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Is there a Stobbs factor in atomic-resolution STEM-EELS mapping?

Recent work has convincingly argued that the Stobbs factor-disagreement in contrast between simulated and experimental atomic-resolution images-in ADF-STEM imaging can be accounted for by including the incoherent source size in simulation. However, less progress has been made for atomic-resolution STEM-EELS mapping. Here we have performed carefully calibrated EELS mapping experiments of a [101]...

متن کامل

Energy-Filtered High-Angle Dark Field Mapping of Ultra-Light Elements

Using the High Energy Resolution Monochromated EELS-STEM (HERMES) system we recently introduced [1] together with Gatan’s Enfinium spectrometer with upgraded ultra-high stability power supplies [2], energy resolution as low as 14 meV has been demonstrated in electron energy loss spectra (EELS) acquired in 0.1 s (Fig. 1), and sub-20 meV resolution has become typical for routine acquisitions of s...

متن کامل

Elemental mapping in scanning transmission electron microscopy

We discuss atomic resolution chemical mapping in scanning transmission electron microscopy (STEM) based on core-loss electron energy loss spectroscopy (EELS) and also on energy dispersive X-ray (EDX) imaging. Chemical mapping using EELS can yield counterintuitive results which, however, can be understood using first principles calculations. Experimental chemical maps based on EDX bear out the t...

متن کامل

High Resolution Optical and Vibrational Spectroscopy with Low Loss EELS

Despite being diffraction limited to thousands of Ångstroms, infrared and optical spectroscopies remain effective characterization techniques. While it is possible to perform subatomic resolution electron energy loss spectroscopy (EELS) at unprecedented energy resolution, with ever improving aberration correctors and monochromators, it is argued that low loss features can be severely delocalize...

متن کامل

Atomic-Scale STEM-EELS Characterization of the Chemistry of Structural Defects and Interfaces in Energy-Related Materials

The physical properties of functional energy materials often depend on their precise chemistry and atomic arrangements at the sub-angstrom scale, and minute changes in composition or structure can dramatically alter the materials' properties. These effects are often too local to be fully understood through bulk characterization methods and advances in analytical scanning transmission electron m...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:
  • Ultramicroscopy

دوره 147  شماره 

صفحات  -

تاریخ انتشار 2014